IPD09N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

Compliant

Terminal Position :

Single

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Drain Current-Max (Abs) (ID) :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0142Ohm

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

57 mJ

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

ECCN Code :

EAR99

FET Type :

N-Channel

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 20μA

Operating Temperature :

-55°C~175°C TJ

Published :

2008

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 50A, 10V

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

2

Number of Elements :

1

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

200A

Power Dissipation-Max :

58W Tc