IPD031N03LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Rds On Max :

3.1 mΩ

Operating Temperature :

-55°C~175°C TJ

Drain to Source Resistance :

3.1mOhm

Fall Time (Typ) :

5 ns

Power Dissipation-Max :

94W Tc

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Rise Time :

6ns

Series :

OptiMOS™

Supplier Device Package :

PG-TO252-3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Published :

2011

Vgs (Max) :

±20V

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.1mOhm @ 30A, 10V

Input Capacitance :

5.3nF

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

34 ns

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 15V

Max Operating Temperature :

175°C

FET Type :

N-Channel

Mount :

Surface Mount

Continuous Drain Current (ID) :

90A

Power Dissipation :

94W

RoHS Status :

ROHS3 Compliant