IPD03N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

25V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Avalanche Energy Rating (Eas) :

300 mJ

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Mounting Type :

Surface Mount

Number of Terminations :

2

Published :

2008

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0051Ohm

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

OptiMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

115W Tc

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

90A

Vgs(th) (Max) @ Id :

2V @ 70μA

Surface Mount :

yes

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

360A

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 60A, 10V

Transistor Element Material :

SILICON