IPD038N06N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

30 ns

FET Type :

N-Channel

Pin Count :

4

Number of Terminations :

2

Rise Time :

70ns

Power Dissipation :

188W

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

18 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Number of Elements :

1

Terminal Position :

Single

Mounting Type :

Surface Mount

Turn-Off Delay Time :

40 ns

Qualification Status :

Not Qualified

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

4V @ 90µA

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 90A, 10V

Power Dissipation-Max :

188W Tc

Input Capacitance (Ciss) (Max) @ Vds :

8000pF @ 30V

Pbfree Code :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

5 ns

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

165 mJ

JEDEC-95 Code :

TO-252AA

Published :

2008

Transistor Element Material :

SILICON

Number of Pins :

3

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

60V

Continuous Drain Current (ID) :

90A

RoHS Status :

ROHS3 Compliant