IPD025N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

26A

Drain to Source Breakdown Voltage :

60V

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0025Ohm

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

34 ns

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Rise Time :

20ns

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Number of Terminations :

2

Mounting Type :

Surface Mount

Number of Channels :

1

Max Dual Supply Voltage :

60V

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Case Connection :

DRAIN

ECCN Code :

EAR99

Number of Pins :

3

Pbfree Code :

No

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2.8V @ 95μA

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 30V

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3W

FET Type :

N-Channel

Turn On Delay Time :

16 ns

Terminal Position :

Single

Height :

2.5mm

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

90A

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

175°C

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3W Ta 167W Tc

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 90A, 10V