IPD031N06L3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JESD-609 Code :

e3

Turn-Off Delay Time :

64 ns

Number of Terminations :

2

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rise Time :

78ns

Continuous Drain Current (ID) :

100A

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

400A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 100A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Series :

OptiMOS™

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Power Dissipation-Max :

167W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 4.5V

Published :

2001

Terminal Position :

Single

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.2V @ 93µA

Turn On Delay Time :

25 ns

Power Dissipation :

167W

Number of Pins :

3

Fall Time (Typ) :

13 ns

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE