IPD09N03LA G
- Mfr.Part #
- IPD09N03LA G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 50A TO252-3
- Stock
- 48,184
- In Stock :
- 48,184
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- MATTE TIN
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 8.6m Ω @ 30A, 10V
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 63W Tc
- Drain to Source Voltage (Vdss) :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 50A
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1642pF @ 15V
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-252AA
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 5V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- Avalanche Energy Rating (Eas) :
- 75 mJ
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Published :
- 2008
- Series :
- OptiMOS™
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM) :
- 350A
- Drain-source On Resistance-Max :
- 0.0148Ohm
- DS Breakdown Voltage-Min :
- 25V
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPD09N03LA G

N-Channel Tape & Reel (TR) 8.6m Ω @ 30A, 10V ±20V 1642pF @ 15V 13nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD09N03LA G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 75 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1642pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 350A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPD09N03LA G Features
the avalanche energy rating (Eas) is 75 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)
IPD09N03LA G Applications
There are a lot of Infineon Technologies
IPD09N03LA G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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