IPD09N03LA G

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Mfr.Part #
IPD09N03LA G
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 50A TO252-3
Stock
48,184
In Stock :
48,184

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Additional Feature :
LOGIC LEVEL COMPATIBLE
RoHS Status :
RoHS Compliant
Terminal Finish :
MATTE TIN
Pin Count :
4
Rds On (Max) @ Id, Vgs :
8.6m Ω @ 30A, 10V
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max :
63W Tc
Drain to Source Voltage (Vdss) :
25V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
50A Tc
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
50A
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1642pF @ 15V
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-252AA
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 5V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
2V @ 20μA
Avalanche Energy Rating (Eas) :
75 mJ
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Number of Elements :
1
Published :
2008
Series :
OptiMOS™
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pulsed Drain Current-Max (IDM) :
350A
Drain-source On Resistance-Max :
0.0148Ohm
DS Breakdown Voltage-Min :
25V
Number of Terminations :
2
Packaging :
Tape and Reel (TR)
Datasheets
IPD09N03LA G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD09N03LA G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, IPD09N03LA G pinout, IPD09N03LA G datasheet PDF, IPD09N03LA G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD09N03LA G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD09N03LA G


N-Channel Tape & Reel (TR) 8.6m Ω @ 30A, 10V ±20V 1642pF @ 15V 13nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD09N03LA G Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 75 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1642pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 350A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IPD09N03LA G Features


the avalanche energy rating (Eas) is 75 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)


IPD09N03LA G Applications


There are a lot of Infineon Technologies
IPD09N03LA G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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