IPD096N08N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

100W Tc

Drain Current-Max (Abs) (ID) :

73A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Published :

2011

Qualification Status :

Not Qualified

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 46A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 40V

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Reach Compliance Code :

Compliant

Pbfree Code :

No

Pulsed Drain Current-Max (IDM) :

292A

Drain-source On Resistance-Max :

0.0096Ohm

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pin Count :

4

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

80V

DS Breakdown Voltage-Min :

80V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

90 mJ

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED