IPD088N06N3GBTMA1

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Mfr.Part #
IPD088N06N3GBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 50A TO252-3
Stock
13,300
In Stock :
13,300

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Continuous Drain Current (ID) :
50A
Series :
OptiMOS™
Factory Lead Time :
18 Weeks
Turn On Delay Time :
15 ns
ECCN Code :
EAR99
Pbfree Code :
No
JESD-609 Code :
e3
Threshold Voltage :
3V
Power Dissipation-Max :
71W Tc
Power Dissipation :
71W
Number of Pins :
3
Halogen Free :
Not Halogen Free
Terminal Finish :
Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
40ns
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
REACH SVHC :
No SVHC
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Transistor Element Material :
SILICON
Pin Count :
3
Lead Free :
Contains Lead
Reach Compliance Code :
not_compliant
Terminal Position :
Single
Number of Terminations :
2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 30V
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
JEDEC-95 Code :
TO-252AA
Drain-source On Resistance-Max :
0.0088Ohm
Vgs(th) (Max) @ Id :
4V @ 34µA
Mount :
Surface Mount
Fall Time (Typ) :
5 ns
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Qualification Status :
Not Qualified
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Rds On (Max) @ Id, Vgs :
8.8m Ω @ 50A, 10V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature :
-55°C~175°C TJ
Turn-Off Delay Time :
20 ns
Pulsed Drain Current-Max (IDM) :
200A
Number of Elements :
1
Max Dual Supply Voltage :
60V
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Published :
2008
Datasheets
IPD088N06N3GBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD088N06N3GBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, IPD088N06N3GBTMA1 pinout, IPD088N06N3GBTMA1 datasheet PDF, IPD088N06N3GBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD088N06N3GBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD088N06N3GBTMA1


N-Channel Tape & Reel (TR) 8.8m Ω @ 50A, 10V ±20V 3900pF @ 30V 48nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD088N06N3GBTMA1 Description


IPD088N06N3GBTMA1 is an OptiMOSTM3 Power-Transistor. The transistor IPD088N06N3GBTMA1 can be applied in Communications equipment, Broadband fixed line access, Industrial, Motor drives, Enterprise systems, and Enterprise projectors applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IPD088N06N3GBTMA1 in the PG-TO252-3 package with 71W Power dissipations.




IPD088N06N3GBTMA1 Features


Ideal for high-frequency switching and sync. rec.

Optimized technology for DCIDC converters

Excellent gate charge x R Ds/(on) product (FOM)

Very low on-resistance Ros(on)

N-channel, normal level

100% avalanche tested

Pb-free plating; RoHS compliant

Qualified according to JEDEC for target applications



IPD088N06N3GBTMA1 Applications


Communications equipment 

Broadband fixed line access 

Industrial 

Motor drives 

Enterprise systems 

Enterprise projectors


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