IPD088N06N3GBTMA1
- Mfr.Part #
- IPD088N06N3GBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 50A TO252-3
- Stock
- 13,300
- In Stock :
- 13,300
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 50A
- Series :
- OptiMOS™
- Factory Lead Time :
- 18 Weeks
- Turn On Delay Time :
- 15 ns
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- JESD-609 Code :
- e3
- Threshold Voltage :
- 3V
- Power Dissipation-Max :
- 71W Tc
- Power Dissipation :
- 71W
- Number of Pins :
- 3
- Halogen Free :
- Not Halogen Free
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 40ns
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Lead Free :
- Contains Lead
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3900pF @ 30V
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-252AA
- Drain-source On Resistance-Max :
- 0.0088Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 34µA
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 5 ns
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Qualification Status :
- Not Qualified
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 8.8m Ω @ 50A, 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 20 ns
- Pulsed Drain Current-Max (IDM) :
- 200A
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Datasheets
- IPD088N06N3GBTMA1

N-Channel Tape & Reel (TR) 8.8m Ω @ 50A, 10V ±20V 3900pF @ 30V 48nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD088N06N3GBTMA1 Description
IPD088N06N3GBTMA1 is an OptiMOSTM3 Power-Transistor. The transistor IPD088N06N3GBTMA1 can be applied in Communications equipment, Broadband fixed line access, Industrial, Motor drives, Enterprise systems, and Enterprise projectors applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IPD088N06N3GBTMA1 in the PG-TO252-3 package with 71W Power dissipations.
IPD088N06N3GBTMA1 Features
Ideal for high-frequency switching and sync. rec.
Optimized technology for DCIDC converters
Excellent gate charge x R Ds/(on) product (FOM)
Very low on-resistance Ros(on)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
IPD088N06N3GBTMA1 Applications
Communications equipment
Broadband fixed line access
Industrial
Motor drives
Enterprise systems
Enterprise projectors
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