IPD082N10N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Pin Count :

3

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 50V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

125W Tc

Terminal Position :

Single

Series :

OptiMOS™

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0082Ohm

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Number of Terminations :

2

Published :

2011

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

320A

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 73A, 10V

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3.5V @ 75μA

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Avalanche Energy Rating (Eas) :

110 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE