IPD082N10N3GATMA1
- Mfr.Part #
- IPD082N10N3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 80A TO252-3
- Stock
- 93,385
- In Stock :
- 93,385
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Series :
- OptiMOS™
- Continuous Drain Current (ID) :
- 80A
- Turn-Off Delay Time :
- 31 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 75μA
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3980pF @ 50V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 8.2m Ω @ 73A, 10V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 125W Tc
- Max Dual Supply Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Rise Time :
- 42ns
- Fall Time (Typ) :
- 8 ns
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0082Ohm
- Avalanche Energy Rating (Eas) :
- 110 mJ
- Turn On Delay Time :
- 18 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPD082N10N3GATMA1

N-Channel Tape & Reel (TR) 8.2m Ω @ 73A, 10V ±20V 3980pF @ 50V 55nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD082N10N3GATMA1 Description
IPD082N10N3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of the IPD082N10N3GATMA1 is -55°C~175°C TJ and its maximum power dissipation is 125W Tc. IPD082N10N3GATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of IPD082N10N3GATMA1 is 18 ns and its Turn-Off Delay Time is 31 ns.
IPD082N10N3GATMA1 Features
-
N-channel, normal level
-
Excellent gate charge x R DS(on) product (FOM)
-
Very low on-resistance R DS(on)
-
175 °C operating temperature
-
Pb-free lead plating; RoHS compliant
-
Qualified according to JEDEC1) for target application
-
Ideal for high-frequency switching and synchronous rectification
-
Halogen-free according to IEC61249-2-21
IPD082N10N3GATMA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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