IPD082N10N3GATMA1

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Mfr.Part #
IPD082N10N3GATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 80A TO252-3
Stock
93,385
In Stock :
93,385

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Number of Pins :
3
Transistor Element Material :
SILICON
FET Type :
N-Channel
Series :
OptiMOS™
Continuous Drain Current (ID) :
80A
Turn-Off Delay Time :
31 ns
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Vgs(th) (Max) @ Id :
3.5V @ 75μA
Reach Compliance Code :
not_compliant
Factory Lead Time :
18 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 50V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
8.2m Ω @ 73A, 10V
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
125W Tc
Max Dual Supply Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
Gull wing
Rise Time :
42ns
Fall Time (Typ) :
8 ns
Lead Free :
Lead Free
Number of Elements :
1
Drain-source On Resistance-Max :
0.0082Ohm
Avalanche Energy Rating (Eas) :
110 mJ
Turn On Delay Time :
18 ns
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Mounting Type :
Surface Mount
Published :
2010
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~175°C TJ
Transistor Application :
SWITCHING
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Datasheets
IPD082N10N3GATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD082N10N3GATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IPD082N10N3GATMA1 pinout, IPD082N10N3GATMA1 datasheet PDF, IPD082N10N3GATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD082N10N3GATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD082N10N3GATMA1


N-Channel Tape & Reel (TR) 8.2m Ω @ 73A, 10V ±20V 3980pF @ 50V 55nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD082N10N3GATMA1 Description


IPD082N10N3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of the IPD082N10N3GATMA1 is -55°C~175°C TJ and its maximum power dissipation is 125W Tc. IPD082N10N3GATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of IPD082N10N3GATMA1 is 18 ns and its Turn-Off Delay Time is 31 ns.



IPD082N10N3GATMA1 Features


  • N-channel, normal level

  • Excellent gate charge x R DS(on) product (FOM)

  • Very low on-resistance R DS(on)

  • 175 °C operating temperature

  • Pb-free lead plating; RoHS compliant

  • Qualified according to JEDEC1) for target application

  • Ideal for high-frequency switching and synchronous rectification

  • Halogen-free according to IEC61249-2-21



IPD082N10N3GATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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