IPD075N03LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

PG-TO252-3-11

Input Capacitance :

1.9nF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

FET Type :

N-Channel

Max Operating Temperature :

175°C

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 30A, 10V

Drain to Source Voltage (Vdss) :

30V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

50A

Published :

2011

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Power Dissipation-Max :

47W Tc

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Rds On Max :

7.5 mΩ

Power Dissipation :

47W

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 15V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V