IPD06N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

200A

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 50A, 10V

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

160 mJ

Drain Current-Max (Abs) (ID) :

50A

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

2

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

83W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.0061Ohm

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 40µA