IPD068N10N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Published :

2014

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 90A, 10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4910pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Drain to Source Voltage (Vdss) :

100V

Pulsed Drain Current-Max (IDM) :

360A

Power Dissipation-Max :

150W Tc

Transistor Element Material :

SILICON

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0068Ohm

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

90A

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

130 mJ

Surface Mount :

yes

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Number of Elements :

1