IPD060N03LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Elements :

1

Mounting Type :

Surface Mount

HTS Code :

8541.29.00.95

Power Dissipation-Max :

56W Tc

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Published :

2010

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.2V @ 250µA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

ECCN Code :

EAR99

Vgs (Max) :

±20V

Turn-Off Delay Time :

20 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

60 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Transistor Element Material :

SILICON

Rise Time :

3ns

Drain-source On Resistance-Max :

0.009Ohm

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

5 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Continuous Drain Current (ID) :

50A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 15V

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Series :

OptiMOS™