IPD053N06NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta 83W Tc

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

18A Ta 45A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Series :

OptiMOS™

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

No

Continuous Drain Current (ID) :

45A

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

12ns

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 45A, 10V

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

60V

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Published :

2008

Turn-Off Delay Time :

20 ns

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

ECCN Code :

EAR99

Power Dissipation :

3W

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

2.8V @ 36μA

Turn On Delay Time :

12 ns

JESD-609 Code :

e3

FET Type :

N-Channel

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

60 mJ

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Packaging :

Cut Tape (CT)

Number of Terminations :

2

Number of Pins :

3

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 30V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63