IPD050N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5m Ω @ 40A, 10V

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 50V

JESD-609 Code :

e3

Power Dissipation-Max :

150W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.8V @ 84μA

Drain Current-Max (Abs) (ID) :

80A

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Published :

2013

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Avalanche Energy Rating (Eas) :

110 mJ

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Terminal Position :

Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.005ohm

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant