IPD050N10N5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

5m Ω @ 40A, 10V

Pulsed Drain Current-Max (IDM) :

320A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Terminal Position :

Single

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.8V @ 84μA

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.005ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

110 mJ

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

150W Tc

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

2

Series :

OptiMOS™

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Number of Elements :

1