IPD04N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 70μA

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0058ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

430 mJ

Transistor Element Material :

SILICON

Series :

OptiMOS™

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Surface Mount :

yes

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

200A

Power Dissipation-Max :

115W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

50A

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 50A, 10V

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Number of Terminations :

2

Number of Elements :

1