IPD048N06L3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

68 mJ

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 30V

FET Type :

N-Channel

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Drain-source On Resistance-Max :

0.0048Ohm

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

90A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 90A, 10V

Pbfree Code :

No

Surface Mount :

yes

DS Breakdown Voltage-Min :

60V

Pin Count :

4

Published :

2008

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 58μA

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

JESD-609 Code :

e3

ECCN Code :

EAR99

Series :

OptiMOS™

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

360A

Transistor Application :

SWITCHING

Power Dissipation-Max :

115W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount