IPD042P03L3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

12400pF @ 15V

Drain Current-Max (Abs) (ID) :

70A

ECCN Code :

EAR99

Published :

1997

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

280A

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Pin Count :

4

Pbfree Code :

No

Terminal Position :

Single

Series :

OptiMOS™

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

269 mJ

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 270µA

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Factory Lead Time :

26 Weeks

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Power Dissipation-Max :

150W Tc

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 70A, 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0068Ohm

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant