IPD042P03L3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

269 mJ

Drain-source On Resistance-Max :

0.0068Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Continuous Drain Current (ID) :

70A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

150W Tc

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

280A

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 70A, 10V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Threshold Voltage :

-1.5V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

12400pF @ 15V

Mounting Type :

Surface Mount

Published :

2014

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Mount :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Number of Terminations :

2

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 270µA

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Position :

Single