IPD040N03LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7.4 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

4mOhm

Continuous Drain Current (ID) :

90A

Drain to Source Voltage (Vdss) :

30V

Published :

2008

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

27 ns

Width :

6.22mm

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Length :

6.73mm

Factory Lead Time :

12 Weeks

Rds On Max :

4 mΩ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

4mOhm @ 30A, 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Supplier Device Package :

PG-TO252-3-11

Max Operating Temperature :

175°C

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 15V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Vgs (Max) :

±20V

Input Capacitance :

3.9nF

Power Dissipation-Max :

79W Tc

Height :

2.41mm

FET Type :

N-Channel

Min Operating Temperature :

-55°C