IPB530N15N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

60 mJ

Power Dissipation :

68W

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

13 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

887pF @ 75V

Published :

2008

Fall Time (Typ) :

3 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

84A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Rds On (Max) @ Id, Vgs :

53m Ω @ 18A, 10V

Lead Free :

Contains Lead

Number of Elements :

1

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Case Connection :

DRAIN

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Terminal Position :

Single

Turn On Delay Time :

9 ns

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

21A

Power Dissipation-Max :

68W Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drain-source On Resistance-Max :

0.053Ohm

Pin Count :

4

Max Dual Supply Voltage :

150V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

4V @ 35μA