IPB50R250CP
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- Mfr.Part #
- IPB50R250CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 4,419
- In Stock ：
- 4,419
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2008
- Rise Time :
- 14ns
- Continuous Drain Current (ID) :
- 13A
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Series :
- CoolMOS™
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 550V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1420pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 114W Tc
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 7.8A, 10V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Max Dual Supply Voltage :
- 500V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 11 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Turn On Delay Time :
- 35 ns
- Avalanche Energy Rating (Eas) :
- 345 mJ
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 114W
- Vgs(th) (Max) @ Id :
- 3.5V @ 520µA
- Drain-source On Resistance-Max :
- 0.25Ohm
- Pbfree Code :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 80 ns
- Datasheets
- IPB50R250CP
N-Channel Tape & Reel (TR) 250m Ω @ 7.8A, 10V ±20V 1420pF @ 100V 36nC @ 10V 550V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB50R250CPATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 345 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1420pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 500V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB50R250CPATMA1 Features
the avalanche energy rating (Eas) is 345 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns
a 550V drain to source voltage (Vdss)
IPB50R250CPATMA1 Applications
There are a lot of Infineon Technologies
IPB50R250CPATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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