IPB50R250CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Halogen Free :

Halogen Free

Turn-Off Delay Time :

80 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.8A, 10V

Drain to Source Voltage (Vdss) :

550V

Max Dual Supply Voltage :

500V

Factory Lead Time :

8 Weeks

Rise Time :

14ns

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Fall Time (Typ) :

11 ns

Pbfree Code :

No

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

114W Tc

Transistor Element Material :

SILICON

Turn On Delay Time :

35 ns

Series :

CoolMOS™

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.25Ohm

Continuous Drain Current (ID) :

13A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

345 mJ

Lead Free :

Contains Lead

Power Dissipation :

114W

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.5V @ 520µA

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 100V

Published :

2008

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant