IPB50R199CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

550V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

No

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Turn On Delay Time :

35 ns

Published :

2008

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

500V

Case Connection :

DRAIN

Pin Count :

4

Power Dissipation :

139W

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 100V

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Number of Terminations :

2

Power Dissipation-Max :

139W Tc

Turn-Off Delay Time :

80 ns

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

17A

Vgs(th) (Max) @ Id :

3.5V @ 660µA

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Series :

CoolMOS™

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

199m Ω @ 9.9A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON