IPB50R250CPATMA1
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- Mfr.Part #
- IPB50R250CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 13A TO263-3
- Stock
- 88,000
- In Stock ：
- 88,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 80 ns
- Rise Time :
- 14ns
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.25Ohm
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Lead Free :
- Contains Lead
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Series :
- CoolMOS™
- Turn On Delay Time :
- 35 ns
- Drain to Source Voltage (Vdss) :
- 550V
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 1420pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 8 Weeks
- Avalanche Energy Rating (Eas) :
- 345 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2008
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 114W
- Max Dual Supply Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3.5V @ 520µA
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 11 ns
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 7.8A, 10V
- Pbfree Code :
- No
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 13A
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 114W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IPB50R250CPATMA1
N-Channel Tape & Reel (TR) 250m Ω @ 7.8A, 10V ±20V 1420pF @ 100V 36nC @ 10V 550V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB50R250CPATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 345 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1420pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.It is [80 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 500V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB50R250CPATMA1 Features
the avalanche energy rating (Eas) is 345 mJ
a continuous drain current (ID) of 13A
the turn-off delay time is 80 ns
a 550V drain to source voltage (Vdss)
IPB50R250CPATMA1 Applications
There are a lot of Infineon Technologies
IPB50R250CPATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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