IPB50R299CPATMA1

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Mfr.Part #
IPB50R299CPATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 550V 12A TO263-3
Stock
40,638
In Stock :
40,638

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.299Ohm
Qualification Status :
Not Qualified
Factory Lead Time :
8 Weeks
Rds On (Max) @ Id, Vgs :
299m Ω @ 6.6A, 10V
Fall Time (Typ) :
12 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
550V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Series :
CoolMOS™
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1190pF @ 100V
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Power Dissipation :
104W
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Rise Time :
14ns
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Mounting Type :
Surface Mount
Max Dual Supply Voltage :
500V
Power Dissipation-Max :
104W Tc
Turn-Off Delay Time :
80 ns
Lead Free :
Contains Lead
Pbfree Code :
No
Terminal Form :
Gull wing
Turn On Delay Time :
35 ns
Pulsed Drain Current-Max (IDM) :
26A
Vgs(th) (Max) @ Id :
3.5V @ 440µA
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
289 mJ
Halogen Free :
Halogen Free
Transistor Element Material :
SILICON
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
12A
Published :
2008
Datasheets
IPB50R299CPATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB50R299CPATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IPB50R299CPATMA1 pinout, IPB50R299CPATMA1 datasheet PDF, IPB50R299CPATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB50R299CPATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB50R299CPATMA1


N-Channel Tape & Reel (TR) 299m Ω @ 6.6A, 10V ±20V 1190pF @ 100V 31nC @ 10V 550V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB50R299CPATMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 289 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1190pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 80 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 26A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 35 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 500V.The transistor must receive a 550V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IPB50R299CPATMA1 Features


the avalanche energy rating (Eas) is 289 mJ
a continuous drain current (ID) of 12A
the turn-off delay time is 80 ns
based on its rated peak drain current 26A.
a 550V drain to source voltage (Vdss)


IPB50R299CPATMA1 Applications


There are a lot of Infineon Technologies
IPB50R299CPATMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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