IPB50R140CPATMA1
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- Mfr.Part #
- IPB50R140CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 23A TO263-3
- Stock
- 39,870
- In Stock ：
- 39,870
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Rise Time :
- 14ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Series :
- CoolMOS™
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 930μA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Max Dual Supply Voltage :
- 500V
- Power Dissipation :
- 192W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2540pF @ 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 550V
- Published :
- 2007
- Turn On Delay Time :
- 35 ns
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 8 ns
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 23A
- Number of Elements :
- 1
- Number of Pins :
- 3
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Reach Compliance Code :
- not_compliant
- Pulsed Drain Current-Max (IDM) :
- 56A
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 14A, 10V
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 80 ns
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 192W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPB50R140CPATMA1
N-Channel Tape & Reel (TR) 140m Ω @ 14A, 10V ±20V 2540pF @ 100V 64nC @ 10V 550V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB50R140CPATMA1 Overview
A device's maximum input capacitance is 2540pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 23A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Its maximum pulsed drain current is 56A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 500V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 550V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPB50R140CPATMA1 Features
a continuous drain current (ID) of 23A
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
a 550V drain to source voltage (Vdss)
IPB50R140CPATMA1 Applications
There are a lot of Infineon Technologies
IPB50R140CPATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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