IMX17T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

600mV @ 50mA, 500mA

Gain Bandwidth Product :

250MHz

Polarity :

NPN

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

Power Dissipation :

300mW

Collector Emitter Voltage (VCEO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MX17

hFE Min :

120

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Type :

2 NPN (Dual)

Published :

1998

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

60V

Element Configuration :

Dual

Voltage - Rated DC :

50V

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Package / Case :

SC-74, SOT-457

Number of Terminations :

6

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Frequency :

250MHz

Current Rating :

500mA

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

ECCN Code :

EAR99

Number of Elements :

2

Emitter Base Voltage (VEBO) :

5V

Terminal Finish :

TIN SILVER COPPER

Mount :

Surface Mount

Max Collector Current :

500mA

Transition Frequency :

250MHz