IMX1T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

60V

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Published :

2001

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

400mV

Collector Emitter Breakdown Voltage :

50V

DC Current Gain-Min (hFE) :

120

Emitter Base Voltage (VEBO) :

7V

hFE Min :

120

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Mount :

Surface Mount

Gain Bandwidth Product :

180MHz

Element Configuration :

Single

Max Breakdown Voltage :

50V

Polarity :

NPN

Transistor Application :

AMPLIFIER

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

SMD/SMT

Max Collector Current :

150mA

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Transition Frequency :

180MHz

VCEsat-Max :

0.4 V

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

150mA

HTS Code :

8541.21.00.95

Number of Pins :

6

Factory Lead Time :

26 Weeks

JESD-609 Code :

e1