IMX1T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

DC Current Gain-Min (hFE) :

120

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Published :

2001

HTS Code :

8541.21.00.95

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

10

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

60V

Package / Case :

SMD/SMT

Number of Pins :

6

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

26 Weeks

Min Operating Temperature :

-55°C

Terminal Position :

Dual

JESD-609 Code :

e1

Number of Elements :

2

hFE Min :

120

Number of Terminations :

6

Max Collector Current :

150mA

Transition Frequency :

180MHz

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

400mV

Terminal Finish :

TIN SILVER COPPER

Continuous Collector Current :

150mA

VCEsat-Max :

0.4 V

Gain Bandwidth Product :

180MHz