IMX17T108
- Mfr.Part #
- IMX17T108
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS 2NPN 50V 0.5A 6SMT
- Stock
- 4,822
- In Stock :
- 4,822
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Package / Case :
- SC-74, SOT-457
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Saturation Voltage :
- 600mV
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- TIN SILVER COPPER
- Number of Pins :
- 6
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 300mW
- Mount :
- Surface Mount
- JESD-609 Code :
- e1
- hFE Min :
- 120
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 500mA
- Published :
- 1998
- Transistor Type :
- 2 NPN (Dual)
- Power - Max :
- 300mW
- Base Part Number :
- MX17
- Element Configuration :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Polarity :
- NPN
- Radiation Hardening :
- No
- Number of Elements :
- 2
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Datasheets
- IMX17T108
IMX17T108 Documents

IMX17T108 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ROHM Semiconductor stock available at
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