IMX17T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

600mV

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Terminal Form :

Gull wing

hFE Min :

120

Transistor Type :

2 NPN (Dual)

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SC-74, SOT-457

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Number of Pins :

6

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Published :

1998

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

Gain Bandwidth Product :

250MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 50mA, 500mA

Polarity :

NPN

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

60V

Number of Terminations :

6

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Power - Max :

300mW

Base Part Number :

MX17

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10