IMB11AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Breakdown Voltage :

50V

Continuous Collector Current :

-50mA

Base Part Number :

MB11

Pbfree Code :

yes

Operating Supply Voltage :

50V

Power Dissipation :

300mW

Package / Case :

SC-74, SOT-457

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

HTS Code :

8541.21.00.75

Resistor - Emitter Base (R2) :

10k Ω

Current Rating :

-50mA

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Max Output Current :

100mA

Voltage - Rated DC :

-50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

300mV

Element Configuration :

Dual

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Polarity :

PNP

Resistor - Base (R1) :

10k Ω

JESD-609 Code :

e1

Number of Elements :

2

Min Operating Temperature :

-55°C

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN SILVER COPPER

hFE Min :

30

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Factory Lead Time :

13 Weeks

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

VCEsat-Max :

0.3 V

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Published :

2004