IMB11AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Max Output Current :

100mA

Number of Terminations :

6

Continuous Collector Current :

-50mA

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Surface Mount

Number of Pins :

6

Radiation Hardening :

No

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

10k Ω

hFE Min :

30

Time@Peak Reflow Temperature-Max (s) :

10

Max Breakdown Voltage :

50V

Frequency - Transition :

250MHz

REACH SVHC :

No SVHC

Transistor Type :

2 PNP - Pre-Biased (Dual)

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Current Rating :

-50mA

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Terminal Form :

Gull wing

Transition Frequency :

250MHz

Terminal Finish :

TIN SILVER COPPER

Operating Supply Voltage :

50V

Resistor - Emitter Base (R2) :

10k Ω

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-74, SOT-457

Pbfree Code :

yes

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Voltage - Rated DC :

-50V

Max Power Dissipation :

300mW

Base Part Number :

MB11

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Element Configuration :

Dual

VCEsat-Max :

0.3 V

Factory Lead Time :

13 Weeks