IMB11AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Power Dissipation :

300mW

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

HTS Code :

8541.21.00.75

Collector Emitter Voltage (VCEO) :

300mV

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

10k Ω

Pbfree Code :

yes

VCEsat-Max :

0.3 V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Current Rating :

-50mA

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

Resistor - Emitter Base (R2) :

10k Ω

Frequency - Transition :

250MHz

Number of Terminations :

6

Mount :

Surface Mount

Package / Case :

SC-74, SOT-457

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V

Pin Count :

6

JESD-609 Code :

e1

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

10

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Element Configuration :

Dual

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

30

Factory Lead Time :

13 Weeks

Operating Supply Voltage :

50V

Max Output Current :

100mA

Published :

2004

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

Continuous Collector Current :

-50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Max Collector Current :

100mA

Number of Pins :

6

Polarity :

PNP

Base Part Number :

MB11

Lead Free :

Lead Free