IMB11AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Pbfree Code :

yes

Voltage - Rated DC :

-50V

Factory Lead Time :

13 Weeks

Pin Count :

6

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

10k Ω

Package / Case :

SC-74, SOT-457

Radiation Hardening :

No

Max Operating Temperature :

150°C

Polarity :

PNP

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Current Rating :

-50mA

Mounting Type :

Surface Mount

Number of Pins :

6

Operating Supply Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Base Part Number :

MB11

REACH SVHC :

No SVHC

Resistor - Base (R1) :

10k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e1

Continuous Collector Current :

-50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Lead Free :

Lead Free

Power Dissipation :

300mW

hFE Min :

30

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Elements :

2

Max Output Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Collector Emitter Voltage (VCEO) :

300mV

VCEsat-Max :

0.3 V

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

TIN SILVER COPPER

Published :

2004

Max Collector Current :

100mA

Max Power Dissipation :

300mW

Frequency - Transition :

250MHz

Transition Frequency :

250MHz