IMB10AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Gull wing

Base Part Number :

MB10

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

10

HTS Code :

8541.21.00.75

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

-50V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity :

PNP

Transition Frequency :

250MHz

Max Breakdown Voltage :

50V

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mount :

Surface Mount

hFE Min :

80

Operating Supply Voltage :

50V

Height :

1.1mm

Number of Terminations :

6

Published :

2008

Current Rating :

-100mA

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Continuous Collector Current :

-100mA

Package / Case :

SC-74, SOT-457

Min Operating Temperature :

-55°C

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

13 Weeks

Pin Count :

6

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47k Ω

Frequency - Transition :

250MHz

Length :

2.9mm

JESD-609 Code :

e1

Element Configuration :

Dual

Mounting Type :

Surface Mount

Width :

1.6mm

ECCN Code :

EAR99

Resistor - Base (R1) :

2.2k Ω

Max Power Dissipation :

300mW

VCEsat-Max :

0.3 V

Radiation Hardening :

No

Max Output Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Lead Free :

Lead Free

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21