HUFA76413DK8

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Series :

UltraFET™

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

49m Ω @ 5.1A, 10V

Drain-source On Resistance-Max :

0.049Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Power - Max :

2.5W

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Qualification Status :

COMMERCIAL

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

260 mJ

JESD-30 Code :

R-PDSO-G8

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

5.1A

Drain Current-Max (Abs) (ID) :

5.1A

Transistor Element Material :

SILICON