HUFA75309T3ST
- Mfr.Part #
- HUFA75309T3ST
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 3A SOT223-4
- Stock
- 34,459
- In Stock :
- 34,459
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 4
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 20V
- Power Dissipation-Max :
- 1.1W Ta
- JESD-30 Code :
- R-PDSO-G4
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 352pF @ 25V
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- yes
- Series :
- UltraFET™
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 55V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.07Ohm
- Drain to Source Voltage (Vdss) :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 3A, 10V
- Drain Current-Max (Abs) (ID) :
- 3A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- HUFA75309T3ST

N-Channel Tape & Reel (TR) 70m Ω @ 3A, 10V ±20V 352pF @ 25V 23nC @ 20V 55V TO-261-4, TO-261AA
HUFA75309T3ST Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 352pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 3A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
HUFA75309T3ST Features
a 55V drain to source voltage (Vdss)
HUFA75309T3ST Applications
There are a lot of Rochester Electronics, LLC
HUFA75309T3ST applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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