HUFA75309T3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

DS Breakdown Voltage-Min :

55V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

352pF @ 25V

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.1W Ta

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

UltraFET™

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

3A

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 20V

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.07Ohm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260