HUFA75307T3ST

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Mfr.Part #
HUFA75307T3ST
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 55V 2.6A SOT223-4
Stock
35,661
In Stock :
35,661

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Terminal Position :
Dual
Turn-Off Delay Time :
35 ns
Series :
Automotive, AEC-Q101, UltraFET™
Turn On Delay Time :
5 ns
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 20V
Power Dissipation :
1.1W
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Packaging :
Tape and Reel (TR)
Rise Time :
30ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Current - Continuous Drain (Id) @ 25°C :
2.6A Ta
Rds On (Max) @ Id, Vgs :
90m Ω @ 2.6A, 10V
Element Configuration :
Single
FET Type :
N-Channel
Number of Pins :
4
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Transistor Application :
SWITCHING
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
1.1W Ta
Radiation Hardening :
No
Continuous Drain Current (ID) :
2.6A
Package / Case :
TO-261-4, TO-261AA
Length :
6.7mm
Number of Terminations :
4
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
55V
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Fall Time (Typ) :
30 ns
Drain-source On Resistance-Max :
0.09Ohm
Gate to Source Voltage (Vgs) :
20V
Width :
3.7mm
Current Rating :
2.6A
Published :
2002
Mount :
Surface Mount
Weight :
188mg
Voltage - Rated DC :
55V
ECCN Code :
EAR99
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Height :
1.8mm
Introducing Transistors - FETs, MOSFETs - Single onsemi HUFA75307T3ST from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, HUFA75307T3ST pinout, HUFA75307T3ST datasheet PDF, HUFA75307T3ST amp .Beyond Transistors - FETs, MOSFETs - Single onsemi HUFA75307T3ST ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HUFA75307T3ST


N-Channel Tape & Reel (TR) 90m Ω @ 2.6A, 10V ±20V 250pF @ 25V 17nC @ 20V TO-261-4, TO-261AA

HUFA75307T3ST Description


HUFA75307T3ST is a 55v N-channel UltraFET Power MOSFET.  This N-Channel power MOSFET HUFA75307T3ST is manufactured using the innovative UtraFET@ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This HUFA75307T3ST is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.



HUFA75307T3ST Features


  • 2.6A, 55V

  • Ultra Low On-Resistance, rDS(ON) = 0.090|?

  • Diode Exhibits Both High Speed and Soft Recovery

  • Temperature Compensating PSPICE?Model

  • Thermal Impedance SPICE Model

  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve



HUFA75307T3ST Applications


  • Switching regulators

  • Switching converters

  • Motor drivers

  • Relay drivers

  • Low-voltage bus switches

  • Power management in portable and battery-operated products


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