HUFA75307T3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

55V

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 20V

Vgs (Max) :

±20V

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

Mount :

Surface Mount

Mounting Type :

Surface Mount

Height :

1.8mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.6A, 10V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.1W

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

2.6A

Length :

6.7mm

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.09Ohm

Terminal Form :

Gull wing

Weight :

188mg

JESD-609 Code :

e3

Power Dissipation-Max :

1.1W Ta

Series :

Automotive, AEC-Q101, UltraFET™

Case Connection :

DRAIN

Published :

2002

Terminal Position :

Dual

Current Rating :

2.6A

Package / Case :

TO-261-4, TO-261AA

Rise Time :

30ns

Transistor Application :

SWITCHING

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Element Configuration :

Single

Width :

3.7mm

Number of Terminations :

4

Fall Time (Typ) :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5 ns