HUFA75307T3ST
- Mfr.Part #
- HUFA75307T3ST
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 2.6A SOT223-4
- Stock
- 35,661
- In Stock :
- 35,661
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 35 ns
- Series :
- Automotive, AEC-Q101, UltraFET™
- Turn On Delay Time :
- 5 ns
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 20V
- Power Dissipation :
- 1.1W
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 30ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Ta
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.6A, 10V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Number of Pins :
- 4
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 1.1W Ta
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 2.6A
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.7mm
- Number of Terminations :
- 4
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 55V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 30 ns
- Drain-source On Resistance-Max :
- 0.09Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 3.7mm
- Current Rating :
- 2.6A
- Published :
- 2002
- Mount :
- Surface Mount
- Weight :
- 188mg
- Voltage - Rated DC :
- 55V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.8mm
- Datasheets
- HUFA75307T3ST
HUFA75307T3ST Documents

N-Channel Tape & Reel (TR) 90m Ω @ 2.6A, 10V ±20V 250pF @ 25V 17nC @ 20V TO-261-4, TO-261AA
HUFA75307T3ST Description
HUFA75307T3ST is a 55v N-channel UltraFET Power MOSFET. This N-Channel power MOSFET HUFA75307T3ST is manufactured using the innovative UtraFET@ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This HUFA75307T3ST is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
HUFA75307T3ST Features
-
2.6A, 55V
-
Ultra Low On-Resistance, rDS(ON) = 0.090|?
-
Diode Exhibits Both High Speed and Soft Recovery
-
Temperature Compensating PSPICE?Model
-
Thermal Impedance SPICE Model
-
Peak Current vs Pulse Width Curve
-
UIS Rating Curve
HUFA75307T3ST Applications
-
Switching regulators
-
Switching converters
-
Motor drivers
-
Relay drivers
-
Low-voltage bus switches
-
Power management in portable and battery-operated products
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