HP8K24TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.0133Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

10nC, 36nC @ 10V

Number of Terminations :

6

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

590pF 2410pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

15A

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

15A Ta 27A Tc 26A Ta 80A Tc

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 15A, 10V, 3m Ω @ 26A, 10V

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F6

Avalanche Energy Rating (Eas) :

16.5 mJ

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

60A

Published :

2016

Case Connection :

DRAIN SOURCE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

ECCN Code :

EAR99

Package / Case :

8-PowerTDFN

Factory Lead Time :

16 Weeks

Power - Max :

3W Ta