HP8KA1TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Flat

Max Power Dissipation :

3W

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Number of Pins :

8

Number of Terminations :

8

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mount :

Surface Mount

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.007Ohm

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

5m Ω @ 14A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerTDFN

Number of Elements :

2

ECCN Code :

EAR99

Power - Max :

3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Reach Compliance Code :

not_compliant

Packaging :

Cut Tape (CT)

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 10mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

14A

Published :

2015