HP8K22TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-PowerTDFN

Factory Lead Time :

20 Weeks

Avalanche Energy Rating (Eas) :

11.4 mJ

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Number of Elements :

2

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 15V

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

16.8nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F6

Case Connection :

DRAIN SOURCE

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0133Ohm

Current - Continuous Drain (Id) @ 25°C :

27A 57A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

48A

Power - Max :

25W

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Half Bridge)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Number of Terminations :

6

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

12A

Terminal Form :

Flat