FZT758TA

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Mfr.Part #
FZT758TA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 400V 0.5A SOT223-3
Stock
3,028
In Stock :
3,028

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2000
Terminal Form :
Gull wing
Length :
6.7mm
Gain Bandwidth Product :
50MHz
Number of Elements :
1
Radiation Hardening :
No
Peak Reflow Temperature (Cel) :
260
Weight :
7.994566mg
Polarity/Channel Type :
PNP
Power Dissipation :
2W
Collector Emitter Saturation Voltage :
-500mV
Operating Temperature :
-55°C~150°C TJ
Case Connection :
COLLECTOR
Base Part Number :
FZT758
Max Breakdown Voltage :
400V
Number of Terminations :
4
Width :
3.7mm
RoHS Status :
ROHS3 Compliant
Pbfree Code :
No
Current - Collector Cutoff (Max) :
100nA
Terminal Position :
Dual
Mounting Type :
Surface Mount
Voltage - Rated DC :
-400V
Transistor Type :
PNP
Collector Emitter Voltage (VCEO) :
400V
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
400V
Package / Case :
TO-261-4, TO-261AA
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 10V
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
-500mA
Lead Free :
Lead Free
Max Collector Current :
500mA
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
4
Mount :
Surface Mount
Height :
1.65mm
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
2W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 100mA
Collector Base Voltage (VCBO) :
400V
Frequency :
50MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
50MHz
Transistor Element Material :
SILICON
Datasheets
FZT758TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT758TA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:FZT758, Number of Terminations:4, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, FZT758TA pinout, FZT758TA datasheet PDF, FZT758TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT758TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT758TA


PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

FZT758TA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 500mA volts at its maximum.

FZT758TA Features


the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz


FZT758TA Applications


There are a lot of Diodes Incorporated
FZT758TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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