FZT717TA
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- Mfr.Part #
- FZT717TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A SOT223-3
- Stock
- 16,899
- In Stock ：
- 16,899
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Number of Elements :
- 1
- Pbfree Code :
- No
- Voltage - Rated DC :
- -12V
- Transistor Type :
- PNP
- Frequency :
- 110MHz
- Packaging :
- Cut Tape (CT)
- Max Power Dissipation :
- 2W
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Emitter Saturation Voltage :
- -320mV
- Max Breakdown Voltage :
- 12V
- Width :
- 3.7mm
- Weight :
- 7.994566mg
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- FZT717
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -3A
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-261-4, TO-261AA
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Gain Bandwidth Product :
- 110MHz
- Factory Lead Time :
- 16 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -3A
- Height :
- 1.65mm
- Radiation Hardening :
- No
- Transition Frequency :
- 110MHz
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 12V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 50mA, 3A
- Length :
- 6.7mm
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 12V
- Datasheets
- FZT717TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT717TA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -320mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 50mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
FZT717TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -320mV
the vce saturation(Max) is 320mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 110MHz
FZT717TA Applications
There are a lot of Diodes Incorporated
FZT717TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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