FZT7053TA
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- Mfr.Part #
- FZT7053TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 1.5A SOT223
- Stock
- 353
- In Stock ：
- 353
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity :
- NPN
- Factory Lead Time :
- 15 Weeks
- hFE Min :
- 10000
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 100V
- Height :
- 1.65mm
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 1.5V
- Transition Frequency :
- 200MHz
- Contact Plating :
- Tin
- Frequency - Transition :
- 200MHz
- Max Power Dissipation :
- 6.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 5V
- Pbfree Code :
- No
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- 12V
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 1.5A
- Element Configuration :
- Single
- JESD-30 Code :
- R-PDSO-G4
- Current - Collector Cutoff (Max) :
- 200nA
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- Power - Max :
- 1.25W
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 1.5A
- Base Part Number :
- FZT7053
- Terminal Position :
- Dual
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.7mm
- Terminal Form :
- Gull wing
- Datasheets
- FZT7053TA
NPN - Darlington -55°C~150°C TJ 200nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT7053TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
FZT7053TA Features
the DC current gain for this device is 1000 @ 1A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
a transition frequency of 200MHz
FZT7053TA Applications
There are a lot of Diodes Incorporated
FZT7053TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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