FZT749TA

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Mfr.Part #
FZT749TA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 25V 3A SOT223-3
Stock
857
In Stock :
857

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
PNP
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
30
Radiation Hardening :
No
Number of Elements :
1
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Max Collector Current :
3A
Lead Free :
Lead Free
Package / Case :
TO-261-4, TO-261AA
Length :
6.7mm
Height :
1.65mm
Vce Saturation (Max) @ Ib, Ic :
600mV @ 300mA, 3A
Current Rating :
-3A
Peak Reflow Temperature (Cel) :
260
Max Breakdown Voltage :
25V
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current :
3A
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
160MHz
Weight :
7.994566mg
REACH SVHC :
No SVHC
Number of Pins :
4
Mount :
Surface Mount
Pbfree Code :
No
Voltage :
25V
Published :
2006
Factory Lead Time :
15 Weeks
Transistor Type :
PNP
Mounting Type :
Surface Mount
Width :
3.7mm
Base Part Number :
FZT749
Voltage - Rated DC :
-25V
Collector Base Voltage (VCBO) :
35V
Element Configuration :
Single
Max Power Dissipation :
2W
Packaging :
Cut Tape (CT)
Terminal Form :
Gull wing
Collector Emitter Breakdown Voltage :
25V
Power Dissipation :
2W
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Transition Frequency :
160MHz
Frequency :
160MHz
Continuous Collector Current :
-3A
Collector Emitter Saturation Voltage :
-400mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 2V
Number of Terminations :
4
Collector Emitter Voltage (VCEO) :
25V
ECCN Code :
EAR99
Datasheets
FZT749TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT749TA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Voltage:25V, Mounting Type:Surface Mount, Base Part Number:FZT749, Number of Terminations:4, FZT749TA pinout, FZT749TA datasheet PDF, FZT749TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT749TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT749TA


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount

FZT749TA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.

FZT749TA Features


the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 160MHz


FZT749TA Applications


There are a lot of Diodes Incorporated
FZT749TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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