FZT749TA
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- Mfr.Part #
- FZT749TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT223-3
- Stock
- 857
- In Stock ：
- 857
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Current :
- 3A
- Gain Bandwidth Product :
- 160MHz
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -400mV
- Base Part Number :
- FZT749
- Frequency :
- 160MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 2W
- Published :
- 2006
- Transition Frequency :
- 160MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- -3A
- Current Rating :
- -3A
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 35V
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Voltage :
- 25V
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Height :
- 1.65mm
- Voltage - Rated DC :
- -25V
- Collector Emitter Breakdown Voltage :
- 25V
- Pbfree Code :
- No
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 25V
- Weight :
- 7.994566mg
- Length :
- 6.7mm
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Datasheets
- FZT749TA
FZT749TA Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT749TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.
FZT749TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 160MHz
FZT749TA Applications
There are a lot of Diodes Incorporated
FZT749TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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