FZT749TA
- Mfr.Part #
- FZT749TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT223-3
- Stock
- 857
- In Stock :
- 857
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.7mm
- Height :
- 1.65mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Current Rating :
- -3A
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 160MHz
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Voltage :
- 25V
- Published :
- 2006
- Factory Lead Time :
- 15 Weeks
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Width :
- 3.7mm
- Base Part Number :
- FZT749
- Voltage - Rated DC :
- -25V
- Collector Base Voltage (VCBO) :
- 35V
- Element Configuration :
- Single
- Max Power Dissipation :
- 2W
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 25V
- Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 160MHz
- Frequency :
- 160MHz
- Continuous Collector Current :
- -3A
- Collector Emitter Saturation Voltage :
- -400mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 25V
- ECCN Code :
- EAR99
- Datasheets
- FZT749TA

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT749TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 2V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.
FZT749TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 160MHz
FZT749TA Applications
There are a lot of Diodes Incorporated
FZT749TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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