FZT749
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- Mfr.Part #
- FZT749
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT223-4
- Stock
- 35,935
- In Stock ：
- 35,935
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Elements :
- 1
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Base Part Number :
- FZT749
- Width :
- 3.7mm
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Published :
- 2017
- Power Dissipation :
- 2W
- Max Collector Current :
- 3A
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- -3A
- hFE Min :
- 100
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 25V
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -25V
- Max Power Dissipation :
- 2W
- Length :
- 6.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- -35V
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- 600mV
- Height :
- 1.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Weight :
- 188mg
- Max Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Datasheets
- FZT749
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT749 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 300mA, 3A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 25V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
FZT749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
FZT749 Applications
There are a lot of ON Semiconductor
FZT749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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