FZT755TA
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- Mfr.Part #
- FZT755TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 150V 1A SOT223-3
- Stock
- 757
- In Stock ：
- 757
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- -150V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -1A
- Radiation Hardening :
- No
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 2W
- Width :
- 3.7mm
- Collector Emitter Voltage (VCEO) :
- 150V
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-261-4, TO-261AA
- Continuous Collector Current :
- -1A
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 150V
- Gain Bandwidth Product :
- 30MHz
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 5V
- Height :
- 1.65mm
- Factory Lead Time :
- 13 Weeks
- Frequency :
- 30MHz
- Power Dissipation :
- 2W
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 150V
- hFE Min :
- 50
- Max Collector Current :
- 1A
- Published :
- 2000
- Mount :
- Surface Mount
- Transition Frequency :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 1A
- Collector Base Voltage (VCBO) :
- 150V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 4
- Number of Terminations :
- 4
- Element Configuration :
- Single
- Length :
- 6.7mm
- Base Part Number :
- FZT755
- Lead Free :
- Lead Free
- Datasheets
- FZT755TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT755TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 30MHz.The breakdown input voltage is 150V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
FZT755TA Features
the DC current gain for this device is 50 @ 500mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 30MHz
FZT755TA Applications
There are a lot of Diodes Incorporated
FZT755TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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