FZT753TA
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- Mfr.Part #
- FZT753TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A SOT223-3
- Stock
- 15,596
- In Stock ：
- 15,596
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current Rating :
- -2A
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Number of Pins :
- 4
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Terminal Position :
- Dual
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Base Part Number :
- FZT753
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 140MHz
- Current :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 120V
- Lead Free :
- Lead Free
- Weight :
- 7.994566mg
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 140MHz
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- Width :
- 3.7mm
- Length :
- 6.7mm
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.65mm
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2W
- Continuous Collector Current :
- -2A
- Frequency :
- 140MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 2A
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage :
- 100V
- Number of Terminations :
- 4
- Voltage - Rated DC :
- -100V
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -300mV
- Radiation Hardening :
- No
- Datasheets
- FZT753TA
FZT753TA Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT753TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
FZT753TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 140MHz
FZT753TA Applications
There are a lot of Diodes Incorporated
FZT753TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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