FZT751TC
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- Mfr.Part #
- FZT751TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT223-3
- Stock
- 11,279
- In Stock ：
- 11,279
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Power Dissipation :
- 3W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Gain Bandwidth Product :
- 140MHz
- Weight :
- 7.994566mg
- Base Part Number :
- FZT751
- Height :
- 1.65mm
- Continuous Collector Current :
- -3A
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 2W
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 140MHz
- Package / Case :
- TO-261-4, TO-261AA
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Frequency :
- 140MHz
- Current Rating :
- -3A
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 4
- Number of Elements :
- 1
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Collector Emitter Saturation Voltage :
- -450mV
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 2W
- Length :
- 6.7mm
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -60V
- Datasheets
- FZT751TC
FZT751TC Documents
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT751TC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -450mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 300mA, 3A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 140MHz.During maximum operation, collector current can be as low as 3A volts.
FZT751TC Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 140MHz
FZT751TC Applications
There are a lot of Diodes Incorporated
FZT751TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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