FZT751TA
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- Mfr.Part #
- FZT751TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A SOT223-3
- Stock
- 833
- In Stock ：
- 833
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Factory Lead Time :
- 15 Weeks
- Width :
- 3.7mm
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Transition Frequency :
- 140MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage :
- 60V
- Continuous Collector Current :
- -3A
- Power Dissipation :
- 3W
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 140MHz
- JESD-30 Code :
- R-PDSO-G4
- Voltage - Rated DC :
- -60V
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 140MHz
- Current Rating :
- -3A
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Published :
- 2013
- Transistor Application :
- SWITCHING
- Current :
- 3A
- Pbfree Code :
- No
- Collector Emitter Saturation Voltage :
- -450mV
- hFE Min :
- 100
- Length :
- 6.7mm
- Height :
- 1.65mm
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- Base Part Number :
- FZT751
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 3A
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Termination :
- SMD/SMT
- Datasheets
- FZT751TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT751TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 2V.The collector emitter saturation voltage is -450mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -3A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 140MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
FZT751TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -450mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 140MHz
FZT751TA Applications
There are a lot of Diodes Incorporated
FZT751TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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