FZT751QTA

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Mfr.Part #
FZT751QTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 3A SOT223-3
Stock
8,155
In Stock :
8,155

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
600mV @ 300mA, 3A
Collector Emitter Breakdown Voltage :
60V
Polarity/Channel Type :
PNP
Number of Terminations :
4
Time@Peak Reflow Temperature-Max (s) :
40
Power - Max :
3W
Terminal Finish :
Matte Tin (Sn)
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Number of Elements :
1
Transistor Element Material :
SILICON
Package / Case :
TO-261-4, TO-261AA
Reach Compliance Code :
not_compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 2V
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
260
Published :
2010
Mount :
Surface Mount
ECCN Code :
EAR99
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
12 Weeks
Transistor Type :
PNP
Pbfree Code :
No
Additional Feature :
High Reliability
Collector Emitter Voltage (VCEO) :
600mV
Max Breakdown Voltage :
60V
JESD-609 Code :
e3
Transition Frequency :
140MHz
Number of Pins :
4
Operating Temperature :
-55°C~150°C TJ
Max Power Dissipation :
3W
Reference Standard :
AEC-Q101
Packaging :
Tape and Reel (TR)
Case Connection :
COLLECTOR
Frequency - Transition :
140MHz
Configuration :
Single
Max Collector Current :
3A
Terminal Form :
Gull wing
Datasheets
FZT751QTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT751QTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, FZT751QTA pinout, FZT751QTA datasheet PDF, FZT751QTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT751QTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT751QTA


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

FZT751QTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 300mA, 3A.A transition frequency of 140MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 3A volts at its maximum.

FZT751QTA Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 600mV @ 300mA, 3A
a transition frequency of 140MHz


FZT751QTA Applications


There are a lot of Diodes Incorporated
FZT751QTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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